Time and place: 2019.4.30, 14:00 pm, Wuhan National High Magnetic Field Center B206

Presenter: Shula Chen

Title: Dilute Nitride Semiconductors and Its Application in Nanophotonics and Optospintronics

Abstract:

Dilute nitride semiconductors, e.g. Ga(In)NAs and GaNP, have been another versatile III-V material system which receives extensive research interest. This is driven by their unique giant bowing effect, i.e. a small incorporation of N into GaAs and GaP enables not only a significant reduction of bandgap, but also decreased lattice constant to integrate with well-established Si-based nanotechnology, therefore holding promise in visible and infrared-ranged nanophotonic applications. I will present our recent results on the GaNAs nanowire lasers, where we for the first time demonstrated the near-IR lasing from such nanostructured dilute nitride materials. Via both alloy and cavity engineering, we achieved wide lasing wavelength tunability and modal switching, which presents GaNAs nanowires as promising candidate for future IR nanolasers. Next, the opto-spintronic properties of GaNAs will be introduced. We demonstrated a room temperature spin-photon interface based on the GaNAs nanopillar array, where a defect-mediated spin filtering mechanism leads to an efficient electron spin amplification by 1200% and achieves a high spin polarization degree up to 60% in single nanopillar at room temperature. These results provide an exciting alternative to realize room temperature nanosized spin laser for future quantum information technology.