题目：Better Interface, Better Device：vdW epitaxy of bismuth and quantum transport in bismuth 2DES

报告人：岳迪 博士，复旦大学

时间：2025年11月6日（周四）上午10:00

地点：国家脉冲强磁场科学中心C204

报告摘要：

The relentless pursuit of next-generation quantum electronic and spintronic devices critically depends on the fabrication of low-dimensional electron systems with exceptionally high crystalline quality and electronic coherence. The advent of two-dimensional (2D) materials with van der Waals (vdW) interfaces brings new opportunities to create versatile high-quality crystalline interfaces and to explore exotic interfacial phenomena.

In this talk, I will review state-of-the-art fabrication techniques for 2D material devices, particularly the vdW assembly in our custom-built ultra-high vacuum (UHV) system, which is compatible with surface science technologies. Specifically, the UHV system enables the exfoliation of atomically clean 2D materials; and the subsequent in situ assembly of vdW heterostructures produces high-quality contamination-free interfaces. As an example, I will present our recent observation of a high-mobility two-dimensional electron system (2DES) on the surface of thin bismuth crystals, synthesized via vdW epitaxy on exfoliated hexagonal boron nitride (hBN) flakes. The superior interface between bismuth and hBN allows us to probe the quantum transport properties of 2D bismuth, thereby unlocking the full quantum potential of the bismuth 2DES and validating the principle: “Better Interface, Better Device.”

报告人简介：

Di Yue obtained his Ph.D. degree from Fudan University in 2019. Since then, he has been a postdoctoral researcher in Yuanbo Zhang’s group at Fudan University. He is a recipient of the Postdoctoral Innovation Talent Support Program from the China Postdoctoral Science Foundation and the Xide Postdoctoral Fellowship from Fudan University. He has been working on developing new quantum materials and exploring novel electronic properties using techniques developed in the fields of surface science, nanoelectronics, and two-dimensional materials.